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Title: Nonstoichiometry and Hole Doping in NiO.
Author: Osorio-Guille, N. J.; Lany, S.; Zunger, A.
Source: Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors (ICPS-29), 27 July-1 August 2008, Rio de Janeiro, Brazil. AIP Conference Proceedings, Vol. 1199.
Pages/Volumes: pp. 128-129
Editor: Caldas, M. J., Studart, N., eds.
Publication Year: 2010
Publisher, Place: Melville, NY: American Institute of Physics (AIP)
Document Type: Conference Paper
NTIS/GPO Number: 1069173
Subject Code Description: Chemical and Material Sciences; Energy Sciences
Accession Number: 49097
Library Notes: NPL-1007 REV FY10Q4 N1A
Report Numbers: CP-590-49097

DOI Link: http://dx.doi.org/10.1063/1.3295330
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