Anneal Treatment to Reduce the Creation Rate of Light-Induced Metastable Defects in Device-Quality Hydrogenated Amorphous Silicon. Article No. 201908.
Author: Bobela, D. C.; Branz, H. M.; Stradins, P.
Source: Applied Physics Letters. Vol. 98(20) 16 May 2011
Pages/Volumes: 3 pp.
Publication Year: 2011
Document Type: Journal Article
Subject Code Description: Solar Energy - Photovoltaics
Accession Number: 50307
Library Notes: NPL-1106 REV
Report Numbers: JA-5200-50307
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