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1.  Yuan, H. C.; Yost, V. E.; Page, M. R.; Stradins, P.; Meier, D. L.; Branz, H. M. (2009). Efficient Black Silicon Solar Cell with a Density-Graded Nanoporous Surface: Optical Properties, Performance Limitations, and Design Rules. Article No. 123501. Applied Physics Letters. Vol. 95(12), 2009; 3 pp.; NREL Report No. JA-520-47065.

2.  Branz, H. M.; Yost, V. E.; Ward, S.; Jones, K. M.; To, B.; Stradins, P. (2009). Nanostructured Black Silicon and the Optical Reflectance of Graded-Density Surfaces. Article No. 231121. Applied Physics Letters. Vol. 94(23), June 2009; 3 pp.; NREL Report No. JA-520-45395.

3.  Martin, I. T.; Branz, H. M.; Stradins, P.; Young, D. L.; Reedy, R. C.; Teplin, C. W. (2009). Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700 ..deg..C. Thin Solid Films. Vol. 517(12), 2009; pp. 3496-3498; NREL Report No. JA-520-45852.

4.  Young, D. L.; Branz, H. M.; Liu, F.; Reedy, R.; To, B.; Wang, Q. (2009). Electron Transport and Band Structure in Phosphorus-Doped Polycrystalline Silicon Films. Article No. 033715. Journal of Applied Physics. Vol. 105(3), 2009; 7 pp.; NREL Report No. JA-520-44933.

5.  Xiang, H. J.; Da Silva, J. L. F.; Branz, H. M.; Wei, S. H. (2009). Understanding the Clean Interface Between Covalent Si and Ionic Al2O3. Article No. 116101. Physical Review Letters. Vol. 103(11), 11 September 2009; 4 pp.; NREL Report No. JA-590-46560.

6.  Wang, Q.; Stradins, P.; Teplin, C.; Branz, H. M. (2009). Method for Rapid, Controllable Growth and Thickness, of Epitaxial Silicon Films. U.S. Patent No. 7,601,215 B1. 14 pp.; NREL Report No. PT-520-47026.

7.  Doyle, J. R.; Xu, Y.; Reedy, R.; Branz, H. M.; Mahan, A. H. (2008). Film Stoichiometry and Gas Dissociation Kinetics in Hot-Wire Chemical Vapor Deposition of a-SiGe:H. Thin Solid Films. Vol. 516(5), 15 January 2008; pp. 526-528; NREL Report No. JA-520-42934.

8.  Cohen, J. D.; Datta, S.; Palinginis, K.; Mahan, A. H.; Iwaniczko, E.; Xu, Y.; Branz, H. M. (2008). Defect Analysis of Thin Film Si-Based Alloys Deposited by Hot-Wire CVD Using Junction Capacitance Methods. Thin Solid Films. Vol. 516(5), 15 January 2008; pp. 663-669; NREL Report No. JA-520-42932.


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9.  Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L. (2008). Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint. 7 pp.; NREL Report No. CP-520-42566.

10.  Teplin, C. W.; Martin, I. T.; Jones, K. M.; Young, D.; Romero, M. J.; Reedy, R. C.; Branz, H. M.; Stradins, P. (2008). Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers. Paper No. 1066-A11-06. Nathan, A., et al., eds. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Proceedings of the Materials Research Society Symposium, 25-28 March 2008, San Francisco, California. Materials Research Society Symposium Proceedings, Vol. 1066. Warrendale, PA: Materials Research Society pp. 285-289; NREL Report No. CP-520-43193.



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