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1.
Yuan, H. C.; Yost, V. E.; Page, M. R.; Stradins, P.; Meier, D. L.; Branz, H. M.
(2009). Efficient Black Silicon Solar Cell with a Density-Graded Nanoporous Surface: Optical Properties, Performance Limitations, and Design Rules. Article No. 123501.
Applied Physics Letters. Vol. 95(12), 2009;
3 pp.; NREL Report No. JA-520-47065.
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2.
Branz, H. M.; Yost, V. E.; Ward, S.; Jones, K. M.; To, B.; Stradins, P.
(2009). Nanostructured Black Silicon and the Optical Reflectance of Graded-Density Surfaces. Article No. 231121.
Applied Physics Letters. Vol. 94(23), June 2009;
3 pp.; NREL Report No. JA-520-45395.
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3.
Martin, I. T.; Branz, H. M.; Stradins, P.; Young, D. L.; Reedy, R. C.; Teplin, C. W.
(2009). Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700 ..deg..C.
Thin Solid Films. Vol. 517(12), 2009;
pp. 3496-3498; NREL Report No. JA-520-45852.
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4.
Young, D. L.; Branz, H. M.; Liu, F.; Reedy, R.; To, B.; Wang, Q.
(2009). Electron Transport and Band Structure in Phosphorus-Doped Polycrystalline Silicon Films. Article No. 033715.
Journal of Applied Physics. Vol. 105(3), 2009;
7 pp.; NREL Report No. JA-520-44933.
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5.
Xiang, H. J.; Da Silva, J. L. F.; Branz, H. M.; Wei, S. H.
(2009). Understanding the Clean Interface Between Covalent Si and Ionic Al2O3. Article No. 116101.
Physical Review Letters. Vol. 103(11), 11 September 2009;
4 pp.; NREL Report No. JA-590-46560.
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6.
Wang, Q.; Stradins, P.; Teplin, C.; Branz, H. M.
(2009). Method for Rapid, Controllable Growth and Thickness, of Epitaxial Silicon Films. U.S. Patent No. 7,601,215 B1.
14 pp.; NREL Report No. PT-520-47026.
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7.
Doyle, J. R.; Xu, Y.; Reedy, R.; Branz, H. M.; Mahan, A. H.
(2008). Film Stoichiometry and Gas Dissociation Kinetics in Hot-Wire Chemical Vapor Deposition of a-SiGe:H.
Thin Solid Films. Vol. 516(5), 15 January 2008;
pp. 526-528; NREL Report No. JA-520-42934.
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8.
Cohen, J. D.; Datta, S.; Palinginis, K.; Mahan, A. H.; Iwaniczko, E.; Xu, Y.; Branz, H. M.
(2008). Defect Analysis of Thin Film Si-Based Alloys Deposited by Hot-Wire CVD Using Junction Capacitance Methods.
Thin Solid Films. Vol. 516(5), 15 January 2008;
pp. 663-669; NREL Report No. JA-520-42932.
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9.
Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.
(2008). Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint.
7 pp.; NREL Report No. CP-520-42566.
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10.
Teplin, C. W.; Martin, I. T.; Jones, K. M.; Young, D.; Romero, M. J.; Reedy, R. C.; Branz, H. M.; Stradins, P.
(2008). Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers. Paper No. 1066-A11-06.
Nathan, A., et al., eds.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Proceedings of the Materials Research Society Symposium, 25-28 March 2008, San Francisco, California. Materials Research Society Symposium Proceedings, Vol. 1066.
Warrendale, PA: Materials Research Society
pp. 285-289; NREL Report No. CP-520-43193.
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