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Records 1 to 6 of 6
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1. Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L. (2009). Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint. 6 pp.; NREL Report No. CP-520-45965. |
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2. Martin, I. T.; Branz, H. M.; Stradins, P.; Young, D. L.; Reedy, R. C.; Teplin, C. W. (2009). Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700 ..deg..C. Thin Solid Films. Vol. 517(12), 2009; pp. 3496-3498; NREL Report No. JA-520-45852. doi:10.1016/j.tsf.2009.01.059 |
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3. Teplin, C. W.; Martin, I. T.; Jones, K. M.; Young, D.; Romero, M. J.; Reedy, R. C.; Branz, H. M.; Stradins, P. (2008). Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers. Paper No. 1066-A11-06. Nathan, A., et al., eds. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Proceedings of the Materials Research Society Symposium, 25-28 March 2008, San Francisco, California. Materials Research Society Symposium Proceedings, Vol. 1066. Warrendale, PA: Materials Research Society pp. 285-289; NREL Report No. CP-520-43193. |
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4. I. T. Martin; H. M. Branz; P. Stradins,; D. L. Young; R. C. Reedy; C. W. Teplin Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700degree symbolC. ; NREL Report No. JA-520-44988. |
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Alberi, K.; Martin, I. T.; Teplin C. W.; Iwaniczko, E.; Xu, Y.; Duda, A.; Stradins, P.; Johnston, S. W.; Branz, H. M.; Young, D. L.
Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 |
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6. Teplin, C. W.; Martin, I. T.; Alberi, K.; Young, D. L.; Shub, M.; Branz, H. M.; Jones, K. M.; Romero, M. J.; Stradins, P. Photovoltaic-Quality Silicon Epitaxy by Hot-Wire CVD at Glass-Compatible Temperatures. ; NREL Report No. CP-520-46033. |
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